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Same model may have multiple batches, images only for reference.
IRFH8202TRPBF Real Image
Same model may have multiple batches, images only for reference.

IRFH8202TRPBF

Part No IRFH8202TRPBF
Manufacturer Infineon Technologies
Catalog FETs - Single
Description OR-ing MOSFET for 12V (typical) Bus in-Rush Current | MOSFET N-CH 25V 100A PQFN
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 25V
Id - Continuous Drain Current 47A, 100A
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 1.05mOhm at 50A, 10V
Gate Source Voltage(th) (Maximum) at Id 2.35V at 150μA
Gate Charge (Qg) (Maximum) at Vgs 110nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 7174pF at 13V
Power Dissipation (Maximum) 3.6W, 160W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package 8-PQFN (5x6)
Manufacturer Package 8-PowerTDFN
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1187622-IRFH8202TRPBF
Manufacturer Homepage www.irf.com
Family Name IRFH8202
Introduction Date October 15, 2008
ECCN EAR99
Country of Origin China, Malaysia
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian IRFH8202TRPBF CAD Model

Description

The IRFH8202TRPBF is a high-performance N-Channel MOSFET manufactured by Infineon Technologies.

  • Package: 8-PowerTDFN
  • Power Dissipation: 3.6W and 160W
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Drain-Source Breakdown Voltage: 25V
  • Rds On: 1.05mOhm @ 50A, 10V

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