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Same model may have multiple batches, images only for reference.
IRF9Z24NSTRL Real Image
Same model may have multiple batches, images only for reference.

IRF9Z24NSTRL

Part No IRF9Z24NSTRL
Manufacturer Infineon Technologies
Catalog FETs - Single
Description MOSFET P-CH 55V 12A D2PAK
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Manufacturer Infineon Technologies
Packaging Reel
Part Status Obsolete (End Of Life)
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) at 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 175mOhm at 7.2A, 10V
Vgs(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 19nC at 10V
Maximum Vgs ±20V
Input Capacitance (Ciss) (Maximum) at Vds 350pF at 25V
Power Dissipation (Maximum) 3.8W , 45W (Tc)
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package D2PAK
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 800
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Balance
Win Source Part Number 806559-IRF9Z24NSTRL
Ultra Librarian 3D Model Ultra Librarian IRF9Z24NSTRL CAD Model

Description

The Infineon Technologies IRF9Z24NSTRL is a P-Channel MOSFET (Metal Oxide) FET Type electronic component.

  • FET Type: P-Channel
  • Mounting Style: SMD
  • Package: D2PAK
  • Drain to Source Voltage (Vdss): 55V
  • Power Dissipation (Maximum): 3.8W, 45W (Tc)
  • Rds On (Maximum) @ Id, Vgs: 175mOhm @ 7.2A, 10V
  • Gate Charge (Qg) (Maximum) @ Vgs: 19nC @ 10V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 350pF @ 25V
  • Status: Obsolete (End Of Life)
  • Popularity: Medium
  • Supply and Demand Status: Balanced
  • Manufacturer Pack Quantity: 800
  • MSL Level: 1 (Unlimited)

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.3928 $55.7120
90+ $1.1429 $102.8610
140+ $1.1071 $154.9940
190+ $1.0714 $203.5660
245+ $1.0357 $253.7465
325+ $0.9286 $301.7950
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