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Same model may have multiple batches, images only for reference.
IRF630SPBF
Same model may have multiple batches, images only for reference.

IRF630SPBF

Part No IRF630SPBF
Manufacturer Infineon Technologies
Catalog FETs - Single
Description MOSFET N-CH 200V 9A D2PAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Infineon Technologies
Standard Package 1000
Category Discrete Semiconductor Products
Family FETs - Single
Packaging Tube
FET Type MOSFET N-Channel Metal Oxide
FET Feature Standard
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Rds On (Max) @ Id Vgs 400 mOhm @ 5.4A 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 43nC @ 10V
Input Capacitance (Ciss) @ Vds 800pF @ 25V
Power - Max 3W
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style SMD/SMT
Package TO-263-3 D²Pak (2 Leads + Tab) TO-263AB
Manufacturer Device Package D2PAK (TO-263)
Catalog N-Channel Standard FETs
Win Source Part Number 040689-IRF630SPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF630SPBF CAD Model

Description

The Infineon Technologies IRF630SPBF is an N-channel metal oxide MOSFET that is designed for use in various applications.

  • FET Type: Standard
  • Drain to Source Voltage: 200V
  • Maximum Power: 3W
  • Maximum Continuous Drain Current: 9A @ 25°C
  • Gate Charge: 43nC @ 10V
  • Input Capacitance: 800pF @ 25V
  • Package: TO-263-3 D²Pak (2 Leads + Tab) TO-263AB
  • Market Popularity: Popular

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