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IRF3704L

Part No IRF3704L
Manufacturer Infineon Technologies
Catalog FETs - Single
Description Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A⑤) | MOSFET N-CH 20V 77A TO-262
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 20V
Id - Continuous Drain Current 77A
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 9mOhm at 15A, 10V
Gate Source Voltage(th) (Maximum) at Id 3V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 19nC at 4.5V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 1996pF at 10V
Power Dissipation (Maximum) 87W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package TO-262
Manufacturer Package TO-262-3 Long Leads, I2Pak, TO-262AA
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1186970-IRF3704L
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF3704L CAD Model

Description

The Infineon Technologies IRF3704L is an N-channel MOSFET transistor that is designed for use in a wide range of applications.

  • Manufacturer: Infineon Technologies
  • Transistor Type: N-channel MOSFET
  • Drain-Source Breakdown Voltage (Max): 20V
  • Continuous Drain Current: 77A
  • On-Resistance (Max) @ Id, Vgs: 9mOhm @ 15A, 10V
  • Gate-Source Voltage Threshold @ Id: 3V @ 250μA
  • Gate Charge @ Vgs: 19nC @ 4.5V
  • Input Capacitance @ Vds: 1996pF @ 10V
  • Package: TO-262
  • Mounting: Through-hole

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