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Same model may have multiple batches, images only for reference.
IPP100N08N3 G Real Image
Same model may have multiple batches, images only for reference.

IPP100N08N3 G

Part No IPP100N08N3 G
Manufacturer Infineon Technologies
Catalog FETs - Single
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Manufacturer Infineon Technologies
Package Type TO-220
Operating Temperature Classification Military
Rad Hardened No
Pin Count 3 +Tab
Gate-Source Voltage (Max) ±20(V)
Drain-Source On-Volt 80(V)
Number of Elements 1
Drain-Source On-Res 0.01(ohm)
Operating Temp Range -55C to 175C
Channel Mode Enhancement
Polarity N
Type Power MOSFET
Continuous Drain Current 70(A)
Power Dissipation 100(W)
Mounting Through Hole
Packaging Rail/Tube
Win Source Part Number 040644-IPP100N08N3 G
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPP100N08N3 G CAD Model

Description

The Infineon Technologies 040644-IPP100N08N3 G is a N-Channel Power MOSFET.

  • Category: Discrete Semiconductor Products
  • Mounting: Through hole
  • Power Dissipation: 100(W)
  • Continuous Drain Current: 70(A)
  • Gate-Source Voltage (Max): ±20(V)
  • Channel Mode: Enhancement
  • Drain-Source On-Volt: 80(V)
  • Drain-Source On-Res: 0.01(ohm)
  • Operating Temperature Range: -55C to 175C
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $2.0333 $60.9990
70+ $1.6684 $116.7880
110+ $1.6162 $177.7820
150+ $1.5641 $234.6150
195+ $1.5120 $294.8400
260+ $1.3555 $352.4300
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 445 pieces
MOQ: 30 pcs
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