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IPP020N08N5AKSA1

Part No IPP020N08N5AKSA1
Manufacturer Infineon Technologies
Catalog FETs - Single
Description MOSFET N-CH TO220-3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Infineon Technologies
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) at 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Maximum) at Id, Vgs 2mOhm at 100A, 10V
Vgs(th) (Maximum) at Id 3.8V at 280μA
Gate Charge (Qg) (Maximum) at Vgs 223nC at 10V
Maximum Vgs ±20V
Input Capacitance (Ciss) (Maximum) at Vds 16900pF at 40V
Power Dissipation (Maximum) 375W (Tc)
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package PG-TO220-3
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 808936-IPP020N08N5AKSA1
Ultra Librarian 3D Model Ultra Librarian IPP020N08N5AKSA1 CAD Model

Description

The IPP020N08N5AKSA1, manufactured by Infineon Technologies, is an N-channel MOSFET transistor that can handle a continuous drain current of up to 120A @ 25°C.

  • Transistor Type: N-channel MOSFET
  • Continuous Drain Current @ 25°C: 120A
  • Rds On (Max): 2mOhm @ 100A, 10V
  • Gate Charge (Max): 223nC @ 10V
  • Input Capacitance: 16900pF @ 40V
  • Operating Temperature: -55°C to 175°C
  • Package: PG-TO220-3
  • Mounting Type: Through Hole
  • Popularity: Medium
  • Supply and Demand Status: Limited
  • Manufacturer Pack Quantity (Max): 50
  • Maximum Vgs: ±20V

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Pricing & Ordering

Quantity Unit Price Ext. Price
21+ $2.8625 $60.1125
50+ $2.3486 $117.4300
77+ $2.2753 $175.1981
105+ $2.2019 $231.1995
136+ $2.1284 $289.4624
182+ $1.9083 $347.3106
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,000 pieces
MOQ: 21 pcs
Order Increment : 1 pcs
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