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Same model may have multiple batches, images only for reference.
IPD50N06S4L-08 Infineon Technologies
Same model may have multiple batches, images only for reference.

IPD50N06S4L-08

Part No IPD50N06S4L-08
Manufacturer Infineon Technologies
Catalog FETs - Single
Description OptiMOS-T2 Power-Transistor
Datasheet
IPD50N06S4L-08 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Infineon Technologies
Operating Temperature Classification Military
Rad Hardened No
Drain-Source On-Volt 60(V)
Number of Elements 1
Drain-Source On-Res 0.0078(ohm)
Mounting Surface Mount
Package Type TO-252
Pin Count 2 +Tab
Operating Temp Range -55C to 175C
Channel Mode Enhancement
Gate-Source Voltage (Max) ±16(V)
Polarity N
Type Power MOSFET
Power Dissipation 71(W)
Continuous Drain Current 50(A)
Win Source Part Number 068998-IPD50N06S4L-08
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPD50N06S4L-08 CAD Model

Description

The IPD50N06S4L-08 is a N-Channel Power MOSFET manufactured by Infineon Technologies.

  • Supply and Demand Status: Balanced
  • Power Dissipation: 71(W)
  • Continuous Drain Current: 50(A)
  • Gate-Source Voltage (Max): ±16(V)
  • Drain-Source On-Resistance: 0.0078(ohm)

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