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IPB80N03S4L-03

Name: IPB80N03S4L-03
Brand: Infineon Technologies
SKU: 158293
Availability: InStock
Rating: 4.85 (5 reviews)

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This model is a standard, industry-grade component frequently used in electronic manufacturing.

Part No	IPB80N03S4L-03
Manufacturer	Infineon Technologies
Catalog	FETs - Single
Description	MOSFET N-CH 30V 80A TO263-3
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products
Family	Transistors - FETs, MOSFETs - Single
Manufacturer	Infineon Technologies
Series	OptiMOS
Packaging	Reel(TR)
FET Type	MOSFET N-Channel, Metal Oxide
FET Feature	Standard
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Rds On (Max) @ Id, Vgs	3.3 mOhm @ 80A, 10V
Vgs(th) (Max) @ Id	2.2V @ 45μA
Gate Charge (Qg) @ Vgs	75nC @ 10V
Input Capacitance (Ciss) @ Vds	5100pF @ 25V
Power - Max	94W
Operating Temperature Range	-55°C ~ 175°C (TJ)
Mounting Style	SMD/SMT
Package	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Device Package	PG-TO263-3-2
Win Source Part Number	007604-IPB80N03S4L-03
Popularity	Medium
Supply and Demand Status	Balance
Ultra Librarian 3D Model	Ultra Librarian IPB80N03S4L-03 CAD Model

Description

The Infineon Technologies 007604-IPB80N03S4L-03 is a N-Channel MOSFET transistor from the OptiMOS series.

Drain-Source Voltage: 30V
Continuous Drain Current @ 25°C: 80A
Maximum Rds On: 3.3 mOhm @ 80A and 10V
Gate-Source Threshold Voltage: 2.2V @ 45μA
Gate Charge: 75nC @ 10V
Input Capacitance: 5100pF @ 25V
Maximum Power: 94W
Package: TO-263-3
Popularity: Medium
Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
18+	$2.9105	$52.3890
42+	$2.3881	$100.3002
65+	$2.3135	$150.3775
90+	$2.2389	$201.5010
116+	$2.1642	$251.0472
155+	$1.9403	$300.7465

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 5,497 pieces

MOQ: 18 pcs

Order Increment : 1 pcs

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