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IPA60R280P7SXKSA1

Name: IPA60R280P7SXKSA1
Brand: Infineon Technologies
SKU: 802668
Availability: InStock
Rating: 4.85 (5 reviews)

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Part No	IPA60R280P7SXKSA1
Manufacturer	Infineon Technologies
Catalog	FETs - Single
Description	MOSFET N-CHANNEL 600V 12A TO220
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Manufacturer	Infineon Technologies
Packaging	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) at 25°C	12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Maximum) at Id, Vgs	280mOhm at 3.8A, 10V
Vgs(th) (Maximum) at Id	4V at 190μA
Gate Charge (Qg) (Maximum) at Vgs	18nC at 10V
Maximum Vgs	±20V
Input Capacitance (Ciss) (Maximum) at Vds	761pF at 400V
Power Dissipation (Maximum)	24W (Tc)
Temperature Range - Operating	-40°C ~ 150°C
Mounting Style	Through Hole
Supplier Device Package	PG-TO220 Full Pack
Manufacturer Package	TO-220-3 Full Pack
Manufacturer Pack Quantity	50
MSL Level	Not Applicable
Popularity	High
Supply and Demand Status	Balance
Win Source Part Number	802668-IPA60R280P7SXKSA1
Ultra Librarian 3D Model	Ultra Librarian IPA60R280P7SXKSA1 CAD Model

Description

The IPA60R280P7SXKSA1 from Infineon Technologies is an N-channel MOSFET.

Drain to Source Voltage: 600V
Continuous Drain Current @ 25°C: 12A
Maximum Gate-Source Voltage: ±20V
Maximum Power Dissipation: 24W (Tc)
On-Resistance: 280mOhm @ 3.8A, 10V
Gate Charge: 18nC @ 10V
Package: TO-220-3 Full Pack

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
90+	$0.5779	$52.0110
185+	$0.5407	$100.0295
290+	$0.5220	$151.3800
415+	$0.4847	$201.1505
540+	$0.4661	$251.6940
675+	$0.4475	$302.0625

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 61,120 pieces

MOQ: 90 pcs

Order Increment : 1 pcs

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Shipped from	HK warehouse
Expected Shipping Date	Ship today if order in (HKT)
Supplier Lead-Time	Call for availability
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