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Same model may have multiple batches, images only for reference.
IMZA120R020M1HXKSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IMZA120R020M1HXKSA1

Part No IMZA120R020M1HXKSA1
Manufacturer Infineon Technologies
Catalog FETs - Single
Description SIC DISCRETE
Datasheet
IMZA120R020M1HXKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Win Source Part Number WS1202694-IMZA120R020M1HXKSA1
Manufacturer Infineon Technologies
Category Discrete Semiconductor Products- Transistors- FETs, MOSFETs- Single FETs, MOSFETs
Series CoolSiC™
Package Tube
Product Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Ultra Librarian 3D Model Ultra Librarian IMZA120R020M1HXKSA1 CAD Model

Description

The Infineon Technologies CoolSiC™ N-Channel MOSFET is a high-performance semiconductor product designed for a wide range of applications.

  • Drain to Source Voltage (Vdss): 1200 V
  • Temperature Range: -55°C to 175°C
  • Technology: SiCFET (Silicon Carbide)
  • Mounting Type: through-hole

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9+ $12.0476 $108.4284
13+ $11.6711 $151.7243
18+ $11.2946 $203.3028
23+ $10.9182 $251.1186
31+ $9.7887 $303.4497
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Availability: 2,400 pieces
MOQ: 4 pcs
Order Increment : 1 pcs
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