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Same model may have multiple batches, images only for reference.
IMZ120R090M1HXKSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IMZ120R090M1HXKSA1

Part No IMZ120R090M1HXKSA1
Manufacturer Infineon Technologies
Catalog FETs - Single
Description SICFET N-CH 1.2KV 26A TO247-4
Datasheet
IMZ120R090M1HXKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Win Source Part Number WS1202693-IMZ120R090M1HXKSA1
Manufacturer Infineon Technologies
Category Discrete Semiconductor Products -Transistors -FETs, MOSFETs- Single FETs, MOSFETs
Series CoolSiC™
Package Tube
Product Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Ultra Librarian 3D Model Ultra Librarian IMZ120R090M1HXKSA1 CAD Model

Description

The Infineon Technologies 1202693 is a high-performance N-Channel MOSFET from the CoolSiC™ series.

  • Technology: SiCFET (Silicon Carbide)
  • Drain-to-Source Voltage (Vdss): 1200V
  • Operating Temperature Range: -55°C to 175°C
  • Package: tube
  • Status: active
  • Mounting: through-hole

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Quantity Unit Price Ext. Price
6+ $10.3330 $61.9980
14+ $8.4784 $118.6976
22+ $8.2134 $180.6948
30+ $7.9485 $238.4550
38+ $7.6835 $291.9730
51+ $6.8887 $351.3237
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Availability: 8,500 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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