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Same model may have multiple batches, images only for reference.
IMW120R350M1HXKSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IMW120R350M1HXKSA1

Part No IMW120R350M1HXKSA1
Manufacturer Infineon Technologies
Catalog FETs - Single
Description SICFET N-CH 1.2KV 4.7A TO247-3
Datasheet
IMW120R350M1HXKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Win Source Part Number WS1202569-IMW120R350M1HXKSA1
Manufacturer Infineon Technologies
Category Discrete Semiconductor Products -Transistors -FETs, MOSFETs- Single FETs, MOSFETs
Series CoolSiC™
Package Tube
Product Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Rds On (Max) @ Id, Vgs 455mOhm @ 2A, 18V
Ultra Librarian 3D Model Ultra Librarian IMW120R350M1HXKSA1 CAD Model

Description

The Infineon Technologies 1202569 is a high-performance N-Channel MOSFET from the CoolSiC™ series.

  • Series: CoolSiC™
  • Technology: SiCFET (Silicon Carbide)
  • Drain-to-Source Voltage (Vdss): 1200V
  • Maximum On-Resistance (Rds On): 455mOhm @ 2A and 18V gate-source voltage (Vgs)
  • Package: Tube
  • Status: Active
  • Maximum Drive Voltage: 15V
  • Minimum Rds On: 18V

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27+ $3.8167 $103.0509
41+ $3.6975 $151.5975
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73+ $3.4589 $252.4997
97+ $3.1011 $300.8067
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Availability: 240 pieces
MOQ: 11 pcs
Order Increment : 1 pcs
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