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Same model may have multiple batches, images only for reference.
IMBG120R350M1HXTMA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IMBG120R350M1HXTMA1

Part No IMBG120R350M1HXTMA1
Manufacturer Infineon Technologies
Catalog FETs - Single
Description SICFET N-CH 1.2KV 4.7A TO263
Datasheet
IMBG120R350M1HXTMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Win Source Part Number WS1202680-IMBG120R350M1HXTMA1
Manufacturer Infineon Technologies
Category Discrete Semiconductor Products Transistors- FETs, MOSFETs -Single FETs, MOSFETs
Series CoolSiC™
Package Tape & Reel (TR) Cut Tape (CT)
Product Status Active
Technology SiCFET (Silicon Carbide)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-7-12
Package / Case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Ultra Librarian 3D Model Ultra Librarian IMBG120R350M1HXTMA1 CAD Model

Description

The Infineon Technologies CoolSiC is a high-performance N-Channel MOSFET designed for high temperature applications.

  • Operating Temperature Range: -55°C to 175°C
  • Technology: silicon carbide (SiC)
  • Package: TO-263-8, D²Pak
  • Series: CoolSiC
  • Mounting Type: surface mount

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30+ $3.4362 $103.0860
46+ $3.3288 $153.1248
63+ $3.2214 $202.9482
81+ $3.1141 $252.2421
108+ $2.7919 $301.5252
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Availability: 480 pieces
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