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Same model may have multiple batches, images only for reference.
IKW03N120H2 Real Image
Same model may have multiple batches, images only for reference.

IKW03N120H2

Part No IKW03N120H2
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 1200V 9.6A 62.5W TO247-3
Datasheet
IKW03N120H2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
VCEO Maximum Collector-Emitter Breakdown Voltage 1200V
Maximum Current Collector 9.6A
Pulsed Collector Current 9.9A
Collector-emitter saturation voltage(Max) 2.8V @ 15V, 3A
Maximum Power Dissipation 62.5W
Total Switching Energy(Ets) 290μJ
Input Type Standard
Gate Charge 22nC
Turn-on and Turn-off delay time 9.2ns/281ns
Testing Conditions 800V, 3A, 82 Ohm, 15V
Reverse Recovery Time (trr) 42ns
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO247-3
Win Source Part Number 068789-IKW03N120H2
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IKW03N120H2 CAD Model

Description

The Infineon Technologies IKW03N120H2 is an IGBT transistor with a maximum power dissipation of 62.5W.

  • Maximum Power Dissipation: 62.5W
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V
  • Maximum Current Collector: 9.6A
  • Collector-Emitter Saturation Voltage(Max): 2.8V @ 15V, 3A
  • Total Switching Energy(Ets): 290μJ
  • Turn-On and Turn-Off Delay Time: 9.2ns/281ns
  • Testing Conditions: 800V, 3A, 82 Ohm, 15V
  • Status: Obsolete(EOL)
  • Popularity: Medium
  • Supply and Demand Status: Balance

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