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Same model may have multiple batches, images only for reference.
IKA08N65ET6XKSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IKA08N65ET6XKSA1

Part No IKA08N65ET6XKSA1
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description HOME APPLIANCES 14
Datasheet
IKA08N65ET6XKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr Infineon Technologies
Series TrenchStop™
Package Tube
Product Status Not For New Designs
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 11 A
Current - Collector Pulsed (Icm) 25 A
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 5A
Power - Max 33 W
Switching Energy 110µJ (on), 40µJ (off)
Input Type Standard
Gate Charge 17 nC
Td (on/off) @ 25°C 20ns/59ns
Test Condition 400V, 5A, 47Ohm, 15V
Reverse Recovery Time (trr) 43 ns
Temperature Range - Operating -40°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Supplier Device Package PG-TO220-3-FP
Base Product Number IKA08N65
Standard Package 50 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1016956-IKA08N65ET6XKSA1
Ultra Librarian 3D Model Ultra Librarian IKA08N65ET6XKSA1 CAD Model

Description

The IKA08N65ET6XKSA1 is a single IGBT (Insulated Gate Bipolar Transistor) from Infineon Technologies.

  • Manufacturer: Infineon Technologies
  • Series: TrenchStop™
  • IGBT Type: Trench Field Stop
  • Collector-Emitter Breakdown Voltage (Max): 650V
  • Collector Current (Max): 11A
  • Power Rating: 33W
  • Reverse Recovery Time: 43ns
  • Operating Temperature: -40°C to 175°C
  • Voltage Supply: 15V
  • Mounting Type: Through Hole
  • Package: TO-220-3 Full Pack
  • Status: Active

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