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Same model may have multiple batches, images only for reference.
IHW25N120R2 Real Image
Same model may have multiple batches, images only for reference.

IHW25N120R2

Part No IHW25N120R2
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 1200V 50A 365W TO247-3
Datasheet
IHW25N120R2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
IGBT Type NPT
VCEO Maximum Collector-Emitter Breakdown Voltage 1200V
Maximum Current Collector 50A
Pulsed Collector Current 75A
Collector-emitter saturation voltage(Max) 1.8V @ 15V, 25A
Maximum Power Dissipation 365W
Total Switching Energy(Ets) 1.59mJ
Input Type Standard
Gate Charge 60.7nC
Turn-on and Turn-off delay time -/324ns
Testing Conditions 600V, 25A, 10 Ohm, 15V
Temperature Range - Operating -40°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO247-3
Win Source Part Number 068781-IHW25N120R2
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IHW25N120R2 CAD Model

Description

The Infineon Technologies IHW25N120R2 is an NPT IGBT designed for use in discrete semiconductor products.

  • Maximum Current Collector: 50A
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V
  • Maximum Power Dissipation: 365W
  • Pulsed Collector Current: 75A
  • Collector-Emitter Saturation Voltage: 1.8V @ 15V, 25A
  • Total Switching Energy: 1.59mJ
  • Turn-On and Turn-Off Delay Time: -/324ns
  • Testing Conditions: 600V, 25A, 10 Ohm, 15V
  • Supply and Demand: limited.

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