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Same model may have multiple batches, images only for reference.
IGP50N60T Real Image
Same model may have multiple batches, images only for reference.

IGP50N60T

Part No IGP50N60T
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 600V 100A 333W TO220-3
Datasheet
IGP50N60T Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
IGBT Type Trench Field Stop
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 100A
Pulsed Collector Current 150A
Collector-emitter saturation voltage(Max) 2V @ 15V, 50A
Maximum Power Dissipation 333W
Total Switching Energy(Ets) 2.6mJ
Input Type Standard
Gate Charge 310nC
Turn-on and Turn-off delay time 26ns/299ns
Testing Conditions 400V, 50A, 7 Ohm, 15V
Temperature Range - Operating -40°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3
Win Source Part Number 068745-IGP50N60T
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IGP50N60T CAD Model

Description

The Infineon Technologies IGP50N60T is a trench field stop insulated gate bipolar transistor (IGBT) that is used in a wide range of electronic devices.

  • Supply and demand: limited.
  • Win Source Part Number: 068745
  • Category: discrete semiconductor products
  • Maximum Current Collector: 100A
  • Temperature Range: -40°C to 175°C (TJ)
  • Case/Package: PG-TO220-3
  • Gate Charge: 310nC
  • Collector-Emitter Saturation Voltage (Max): 2V @ 15V, 50A
  • Total Switching Energy (Ets): 2.6mJ
  • Turn-On and Turn-Off Delay Time: 26ns/299ns
  • Testing Conditions: 400V, 50A, 7 Ohm, 15V

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