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Same model may have multiple batches, images only for reference.
IDH02SG120XKSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IDH02SG120XKSA1

Part No IDH02SG120XKSA1
Manufacturer Infineon Technologies
Catalog Diodes, Rectifiers - Single
Description DIODE SCHOTTKY 1200V 2A TO220-2
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Diode Type Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 1200V
Current - Average Rectified (Io) 2A (DC)
Voltage - Forward (Vf) (Max) @ If 1.8V @ 2A
Speed(Frequency) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0ns
Current - Reverse Leakage @ Vr 48μA @ 1200V
Capacitance @ Vr, F 125pF @ 1V, 1MHz
Mounting Through Hole
Case / Package PG-TO220-2
Operating Temperature - Junction -55°C to 175°C
Win Source Part Number 1044836-IDH02SG120XKSA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IDH02SG120XKSA1 CAD Model

Description

Infineon Technologies' IDH02SG120XKSA1 is a Silicon Carbide Schottky diode that has a maximum DC reverse voltage of 1200V and an average rectified current of 2A (DC).

  • Maximum DC Reverse Voltage: 1200V
  • Average Rectified Current: 2A (DC)
  • Forward Voltage: 1.8V @ 2A
  • Reverse Recovery Time (trr): 0ns
  • Current Reverse Leakage: 48μA @ 1200V
  • Capacitance: 125pF @ 1V, 1MHz
  • Mounting Type: Through-hole
  • Package: PG-TO220-2
  • Ideal for: Use in discrete semiconductor products
  • Popularity: Medium
  • Supply and Demand Status: Balanced

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