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GS66516T-MR

Part No GS66516T-MR
Manufacturer Infineon Technologies
Catalog Discrete Semiconductor Products
Description GS66516T-MR
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs
Mfr Infineon Technologies Canada Inc.
Part Status Active
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V
Rds On (Max) @ Id, Vgs 32mOhm @ 18A, 6V
Vgs(th) (Max) @ Id 1.3V @ 14mA
Gate Charge (Qg) (Max) @ Vgs 12.1 nC @ 6 V
Vgs (Max) +7V, -10V
Input Capacitance (Ciss) (Max) @ Vds 520 pF @ 400 V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 4-SMD, No Lead
Packaging Tape & Reel (TR)Cut Tape (CT)
Ultra Librarian 3D Model Ultra Librarian GS66516T-MR CAD Model

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $75.4374 $75.4374
2+ $61.8973 $123.7946
3+ $59.9630 $179.8890
4+ $58.0288 $232.1152
5+ $56.0945 $280.4725
6+ $50.2916 $301.7496
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 234 pieces
Order Increment : 1 pcs
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