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Same model may have multiple batches, images only for reference.
CY14B108L-BA25XI Cypress Semiconductor Corp
Same model may have multiple batches, images only for reference.

CY14B108L-BA25XI

Part No CY14B108L-BA25XI
Manufacturer Infineon Technologies
Catalog Memory
Description IC NVSRAM 8MBIT PARALLEL 48FBGA
Datasheet
CY14B108L-BA25XI Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Integrated Circuits (ICs) - Memory - Memory
Mfr Infineon Technologies
Package Tray
Product Status Active
Programmable Not Verified
Memory Type Non-Volatile
Memory Format NVSRAM
Technology NVSRAM (Non-Volatile SRAM)
Memory Size 8Mbit
Memory Organization 1M x 8
Memory Interface Parallel
Write Cycle Time - Word, Page 25ns
Access Time 25 ns
Voltage - Supply 2.7V ~ 3.6V
Temperature Range - Operating -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 48-TFBGA
Supplier Device Package 48-FBGA (6x10)
Base Product Number CY14B108
Standard Package 1,495 pcs
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN 3A991B2A
HTSUS 8542.32.0041
Win Source Part Number 581272-CY14B108L-BA25XI
Ultra Librarian 3D Model Ultra Librarian CY14B108L-BA25XI CAD Model

Description

The CY14B108L-BA25XI is a memory integrated circuit from Infineon Technologies.

  • Type: 8Mbit NVSRAM (Non-Volatile SRAM)
  • Memory Size: 8Mbit
  • Access Time: 25ns
  • Voltage Range: 2.7V to 3.6V
  • Mounting: Surface mountable
  • Package: 48-TFBGA
  • Memory Interface: Parallel
  • Memory Organization: 1M x 8
  • Applications: Data logging systems, battery-backed memory applications, and industrial control systems.

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