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Same model may have multiple batches, images only for reference.
BSO612CVG Real Image
Same model may have multiple batches, images only for reference.

BSO612CVG

Part No BSO612CVG
Manufacturer Infineon Technologies
Catalog FETs - Arrays
Description BSO612 - 20V-60V COMPLEMENTARY M
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr Infineon Technologies
Series SIPMOS®
Package Bulk
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration N and P-Channel
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 3A (Ta), 2A (Ta)
Rds On (Max) @ Id, Vgs 120mOhm @ 3A, 10V, 300mOhm @ 2A, 10V
Vgs(th) (Max) @ Id 4V @ 20µA, 4V @ 450µA
Gate Charge (Qg) (Max) @ Vgs 15.5nC @ 10V, 16nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 340pF, 400pF @ 25V
Power - Max 2W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package PG-DSO-8
Base Product Number BSO612
Standard Package 687 pcs
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 572118-BSO612CVG
Ultra Librarian 3D Model Ultra Librarian BSO612CVG CAD Model

Description

The BSO612CVG is a FET, MOSFET array from Infineon Technologies.

  • Product Name: BSO612CVG
  • Type: FET, MOSFET array
  • Series: SIPMOS
  • Package: Bulk
  • Package Quantity: 687 pcs
  • Channel Type: N and P-channel
  • Drain to Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id) @ 25°C: 3A
  • On-Resistance (Rds On) @ 3A and 10V: 120mOhm
  • On-Resistance (Rds On) @ 2A and 10V: 300mOhm
  • Manufacturer: Infineon Technologies
  • Category: Discrete semiconductor products, FET and MOSFET arrays

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Quantity Unit Price Ext. Price
115+ $0.4494 $51.6810
275+ $0.3688 $101.4200
420+ $0.3573 $150.0660
580+ $0.3457 $200.5060
750+ $0.3342 $250.6500
1,005+ $0.2996 $301.0980
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Availability: 12,500 pieces
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