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BSO080P03NS

Part No BSO080P03NS
Manufacturer Infineon Technologies
Catalog Miscellaneous
Sample
Rohs State rohs
ECAD Module
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Categories Uncategorized
Manufacturer Infineon Technologies
Popularity Low
Supply and Demand Status Limited
Win Source Part Number 819730-BSO080P03NS
Ultra Librarian 3D Model Ultra Librarian BSO080P03NS CAD Model

Description

The BSO080P03NS is a P-channel power MOSFET from Infineon Technologies, designed for various power management and switching applications. Part of the OptiMOS™ family, this MOSFET is characterized by its low on-state resistance (RDS(on)) and efficient switching performance, contributing to overall system efficiency and reduced power dissipation.

Applications:

  • Load switches in power distribution systems
  • Battery management systems (BMS)
  • DC-DC converters
  • Power OR-ing applications
  • Motor control circuits

Features:

  • Low on-state resistance (RDS(on)): Minimizes conduction losses.
  • Optimized switching performance: Reduces switching losses and improves efficiency.
  • Logic level compatibility: Simplifies gate drive circuitry.
  • Avalanche rated: Enhances robustness against voltage transients.
  • Pb-free terminal plating; RoHS compliant: Ensures environmental compliance.

Benefits:

  • Improved system efficiency: Low RDS(on) and efficient switching minimize power losses.
  • Reduced power dissipation: Less heat generation allows for smaller heat sinks.
  • Simplified design: Logic level compatibility enables direct drive from microcontrollers.
  • Increased reliability: Avalanche rating provides protection against overvoltage events.
  • Environmentally friendly: Pb-free and RoHS compliant.

Additional Details:

The BSO080P03NS features a drain-source voltage (VDS) rating suitable for a range of applications, typically around 30V. Its low RDS(on) is a key performance indicator, measured at a gate-source voltage (VGS) of 10V. The MOSFET is available in a surface-mount package, designed for efficient heat dissipation and ease of assembly. The ‘NS’ suffix typically designates a specific package and reel configuration tailored for automated manufacturing processes.

This P-channel MOSFET is particularly suited for applications where a low-side switch is required, providing an efficient and reliable solution for controlling power to various loads. Its avalanche capability enhances its robustness in demanding applications where voltage transients are common. Engineers can refer to the datasheet for detailed specifications on its electrical characteristics, thermal performance, and safe operating area, enabling them to optimize its use in their designs. The combination of low RDS(on) and efficient switching characteristics makes it a valuable component for achieving high-efficiency power conversion and control.

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Pricing & Ordering

Quantity Unit Price Ext. Price
230+ $0.2529 $58.1670
560+ $0.2079 $116.4240
865+ $0.2010 $173.8650
1,195+ $0.1940 $231.8300
1,535+ $0.1883 $289.0405
2,055+ $0.1686 $346.4730
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,300 pieces
MOQ: 230 pcs
Order Increment : 1 pcs
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