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BSC883N03MS G

Part No BSC883N03MS G
Manufacturer Infineon Technologies
Catalog FETs - Arrays
Description Trans MOSFET N-CH 30V 19A Automotive 8-Pin TDSON EP T/R
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family FETs - Arrays
Manufacturer Infineon Technologies
Win Source Part Number 237217-BSC883N03MS G
Popularity Low
Supply and Demand Status Balance
Family Name BSC883N03MS
Introduction Date October 21, 2008
ECCN EAR99
Country of Origin China, Malaysia
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian BSC883N03MS G CAD Model

Description

Overview

The BSC883N03MS G N-channel MOSFET is engineered for superior performance, providing reliable switching solutions for contemporary electronic designs. Its high efficiency and compact form factor make it a preferred choice for modern applications.

Features and Benefits

  • Low gate charge for energy-efficient operation.
  • Fast switching speeds to improve response time.
  • Compact size facilitates easier integration.
  • Enhanced reliability and lifecycle performance.

Applications

  • Point-of-load converters.
  • High-speed motor control.
  • Asynchronous rectifiers in SMPS.
  • Telecommunications infrastructure.
  • Battery protection circuits.

Additional Details

Capable of handling a wide temperature range, this MOSFET supports VDS up to 30V and an ID of 75A, ensuring robust performance under demanding conditions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
250+ $0.2003 $50.0750
610+ $0.1644 $100.2840
945+ $0.1593 $150.5385
1,300+ $0.1541 $200.3300
1,680+ $0.1490 $250.3200
2,250+ $0.1336 $300.6000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,327 pieces
MOQ: 250 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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