The BFR380L3-E6832 is a high-frequency, low-noise bipolar transistor manufactured by Infineon Technologies. It is designed for use in a variety of RF applications where high gain and low noise are critical. Its advanced fabrication process enables excellent performance characteristics, making it suitable for demanding wireless communication systems.

Applications

• Low Noise Amplifiers (LNAs) for mobile communication devices
• RF front-end modules for wireless systems
• Oscillators and mixers in communication equipment
• Satellite communication systems
• GPS receivers

Features

• High transition frequency (fT) of 25 GHz
• Low noise figure (NF) of 1.2 dB at 1.8 GHz
• High gain of 20 dB at 1.8 GHz
• Low collector-emitter saturation voltage
• Excellent power gain
• Small SOT-343 package for compact designs

Benefits

• Improved receiver sensitivity due to low noise figure
• Increased signal strength and range due to high gain
• Reduced power consumption due to efficient operation
• Smaller and lighter designs due to compact package
• Enhanced system performance in demanding RF applications

Technical Specifications

The BFR380L3-E6832's key specifications include a collector-emitter voltage (VCEO) of 3.2 V, a collector current (IC) of 40 mA, and a transition frequency (fT) of 25 GHz. It is housed in a SOT-343 package, which is designed for surface mount technology (SMT) assembly. The device is also RoHS compliant, ensuring environmental friendliness. Its low noise figure and high gain make it an ideal choice for sensitive receiver applications. The transistor's performance is optimized for frequencies in the GHz range, making it suitable for modern wireless communication standards.