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HY57V1291620TC-10P

Part No HY57V1291620TC-10P
Manufacturer Hynix Semiconductor
Catalog SD
Description SD 8Mx16 PC100 CL2
Sample
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ECAD Module
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Categories Memory
Win Source Part Number 945311-HY57V1291620TC-10P
Series *
Ultra Librarian 3D Model Ultra Librarian HY57V1291620TC-10P CAD Model

Description

The Hynix HY57V1291620TC-10P is a 128Mbit Synchronous DRAM (SDRAM) chip, meticulously designed for high-performance applications requiring rapid data access and significant memory capacity. Its versatile design makes it a common component in a variety of electronic devices, including PCs, networking equipment, and embedded systems.

Applications

  • Personal Computers: Employed as main memory in desktop and laptop computers.
  • Graphics Cards: Utilized as memory for graphics processing units (GPUs).
  • Networking Devices: Integrated for buffering memory in routers and switches.
  • Embedded Systems: Incorporated as high-performance memory in numerous embedded applications.
  • Gaming Consoles: Serves as system memory in gaming devices.

Features

  • Capacity: 128Mbit (8M x 16) memory organization.
  • Data Rate: High data transfer rates for efficient data processing and quick access.
  • Synchronous Operation: Operates synchronously with the system clock, ensuring efficient timing and data integrity.
  • Operating Voltage: Designed to operate at 3.3V.
  • Package Type: TSOP (Thin Small Outline Package) for simplified board integration.
  • Clock Frequency: Operates with a high clock frequency to facilitate fast data access.
  • Refresh Rate: Features standard refresh rates to maintain data integrity over time.

Benefits

  • Enhanced System Performance: Enables rapid data access, significantly improving the overall system responsiveness.
  • High Memory Capacity: Capable of handling large datasets and supporting complex applications.
  • Reliable Functionality: Engineered for reliable performance across various operating environments.
  • Streamlined System Design: Synchronous operation simplifies the design process for memory controllers.
  • Cost-Effective Solution: Provides a cost-effective memory solution for diverse applications.

Technical Specifications

The HY57V1291620TC-10P SDRAM operates at 3.3V and is fully compliant with JEDEC standards for SDRAM devices. Its key specifications encompass configurable CAS latency settings and burst lengths, allowing for optimized performance based on specific application needs. The device is packaged in a TSOP format, facilitating easy integration into a wide range of systems. The design incorporates standard refresh rates to ensure data integrity and is engineered to operate within a typical commercial temperature range.

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