The HY51VS65403HGLT-5 is a high-speed CMOS synchronous DRAM (SDRAM) from Hynix Semiconductor. This component is designed for memory applications requiring fast data transfer rates and efficient memory management.

Applications

• Graphics cards
• High-performance computing systems
• Networking equipment
• Digital signal processing (DSP) systems
• Industrial control systems

Features

• 64Mbit (8M x 8) SDRAM
• Operating speed: 200 MHz
• Supply voltage: 3.3V
• CAS Latency (CL) of 3
• Burst Length: 1, 2, 4, 8, and Full Page
• Auto Precharge and Controlled Precharge
• Self Refresh Capability
• Package: TSOP II

Benefits

• High bandwidth and fast data transfer rates enhance system performance.
• Low voltage operation reduces power consumption, making it suitable for energy-efficient applications.
• Flexible burst modes optimize data access for various memory operations.
• Auto and controlled precharge functions simplify memory management and improve efficiency.
• Self-refresh capability minimizes power consumption during idle periods.
• Compact TSOP II package allows for high-density board designs.

Additional Details

The HY51VS65403HGLT-5 SDRAM utilizes a synchronous interface to provide precise data synchronization with the system clock. Its 8M x 8 configuration allows for efficient storage and retrieval of data. The device supports various burst lengths, including 1, 2, 4, 8, and full page, providing flexibility for different application requirements. The auto precharge feature automatically precharges the memory array after a read or write operation, while the controlled precharge function allows for manual control of the precharge process. The self-refresh capability enables the device to retain data even when the system is in a low-power state. The TSOP II package ensures compatibility with standard board designs and facilitates easy integration into existing systems.