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H9CCNNN8KTALBR-NTM

Part No H9CCNNN8KTALBR-NTM
Manufacturer Hynix Semiconductor
Catalog DDR
Description LPDDR3-1600 x32 (8Gb)
Sample
Rohs State rohs
ECAD Module
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Categories Memory
Win Source Part Number 943024-H9CCNNN8KTALBR-NTM
Series *
Ultra Librarian 3D Model Ultra Librarian H9CCNNN8KTALBR-NTM CAD Model

Description

The H9CCNNN8KTALBR-NTM is a type of DDR (Double Data Rate) memory manufactured by Hynix Semiconductor. It is designed for use in a wide range of applications requiring high-speed data transfer and efficient memory access.

Applications

  • Mobile Devices (Smartphones, Tablets)
  • Embedded Systems
  • Networking Equipment
  • Automotive Systems
  • Industrial Applications

Features

  • DDR Memory (Exact generation unknown without further specifications)
  • High-Speed Data Transfer
  • Low Power Consumption
  • Compact Package
  • High Density

Benefits

  • Improved System Performance: High-speed data transfer rates enhance the overall performance of the host system.
  • Extended Battery Life: Low power consumption contributes to longer battery life in mobile devices.
  • Smaller Footprint: Compact package allows for integration into space-constrained applications.
  • High Capacity: High-density memory provides ample storage for demanding applications.
  • Reliable Operation: Designed for robust performance in various operating conditions.

Additional Details

Given the product identifier, determining the precise DDR generation (e.g., DDR3, DDR4, LPDDR4) and other specifications (e.g., capacity, voltage, clock speed) requires additional information from datasheets or product documentation. The specific values depend on the exact configuration and revision of the memory chip.

The H9CCNNN8KTALBR-NTM is designed to meet the demanding requirements of modern electronic devices, providing fast and efficient memory access while minimizing power consumption. The memory's high density allows for storing large amounts of data, enabling complex applications and multitasking capabilities.

Proper handling and installation are essential to prevent damage to the memory chip. ESD precautions should be observed during handling and assembly to protect the device from electrostatic discharge damage.

Due to the limited information available without the full datasheet, consulting the manufacturer's documentation is critical for understanding the complete set of features, specifications, and operating conditions of the H9CCNNN8KTALBR-NTM DDR memory.

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $26.0857 $78.2571
6+ $21.4045 $128.4270
9+ $20.7357 $186.6213
12+ $20.0670 $240.8040
15+ $19.3971 $290.9565
20+ $17.3908 $347.8160
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,345 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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