The H5TQ4G83AMR-H9C is a high-speed DDR3 SDRAM (Synchronous Dynamic Random-Access Memory) component manufactured by Hynix Semiconductor. This memory chip is designed for use in a wide range of applications requiring high bandwidth and low latency data access.

Applications

• Desktop and laptop computers
• Servers
• Networking equipment (routers, switches)
• Graphics cards
• Gaming consoles
• Embedded systems

Features

• 4Gb (512M x 8) memory organization
• DDR3 interface with data transfer rates up to 1600 Mbps
• 8 internal banks for concurrent operations
• Double data rate architecture: two data transfers per clock cycle
• 8-bit prefetch architecture
• On-die termination (ODT)
• Auto refresh and self-refresh modes
• RoHS compliant
• Operating temperature range: 0°C to 85°C

Benefits

• High bandwidth for improved system performance
• Low power consumption for energy efficiency
• Increased memory capacity for handling large datasets and complex applications
• Reduced latency for faster response times
• Improved system stability and reliability

Technical Specifications

The H5TQ4G83AMR-H9C operates at a supply voltage of 1.5V. It is packaged in a standard FBGA (Fine-pitch Ball Grid Array) package, allowing for easy surface mounting. The component supports various JEDEC standard timings and configurations, enabling compatibility with a wide range of memory controllers. It supports burst lengths of 4 and 8. It offers improved power efficiency compared to previous generation DDR2 memory. The integrated on-die termination reduces signal reflections and improves signal integrity, even at high data rates.

The memory chip uses lead-free manufacturing processes, adhering to environmental regulations. The H5TQ4G83AMR-H9C is designed to meet the demands of modern computing and networking applications, providing a robust and efficient memory solution.