The H5TQ4G63GFR-RDC is a 4Gb DDR3 SDRAM (Synchronous Dynamic Random-Access Memory) chip produced by Hynix Semiconductor. It's designed for applications needing substantial memory capacity and rapid data transfer, typically organized as 256M x 16.

Applications

• Desktop Computers
• Laptop Computers
• Graphics Cards
• Gaming Consoles
• Networking Devices
• High-Performance Embedded Systems

Features

• Capacity: 4Gb (256M x 16)
• Interface: DDR3 SDRAM
• Operating Voltage: 1.5V (Typical)
• Speed Grade: RDC (Determines maximum clock frequency and data transfer rate)
• Data Rate: Supports various data transfer rates, depending on the RDC speed grade.
• Clock Frequency: Operates at a clock frequency determined by its speed grade.
• Package: FBGA (Fine-Pitch Ball Grid Array)
• RoHS Compliance: Lead-free and compliant with RoHS environmental regulations.
• Power-Saving Modes: Includes power-down modes to reduce energy consumption when inactive.
• Double Data Rate: Transfers data on both rising and falling edges of the clock.

Benefits

• High Capacity: Suitable for memory-intensive applications.
• High Bandwidth: DDR3 provides significantly improved bandwidth compared to older memory technologies.
• Lower Power Consumption: Operates at 1.5V.
• Improved Performance: Enhances system performance due to its fast data transfer capabilities.
• Cost-Effective: DDR3 offers a good balance of performance and cost.
• Wide Availability: DDR3 is widely supported.
• Reliable Operation: Stable and reliable performance in various operating conditions.

Additional Details

The 'RDC' speed grade determines the performance characteristics of this chip. Refer to the Hynix datasheet for detailed timing specifications associated with the RDC speed bin. The FBGA package allows for efficient PCB mounting and thermal dissipation. DDR3 SDRAM utilizes a prefetch architecture for improved data throughput. These are commonly used to create memory modules.