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H5TQ2G63BFR-11C-C

Part No H5TQ2G63BFR-11C-C
Manufacturer Hynix Semiconductor
Catalog DDR
Description GDDR3 900MHz 128Mx16 (2Gb)
Sample
Rohs State rohs
ECAD Module
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Categories Memory
Win Source Part Number 943867-H5TQ2G63BFR-11C-C
Series *
Ultra Librarian 3D Model Ultra Librarian H5TQ2G63BFR-11C-C CAD Model

Description

The H5TQ2G63BFR-11C-C is a DDR3 SDRAM (Synchronous Dynamic Random-Access Memory) component manufactured by Hynix Semiconductor. This chip is designed for applications that require high bandwidth, low power consumption, and reliable performance. The '11C' in the part number often indicates specific timing or temperature grade characteristics.

Applications:

  • Desktop computers
  • Laptop computers
  • Gaming consoles
  • Networking devices (routers, switches)
  • Embedded systems

Features:

  • DDR3 Technology: Employs DDR3 architecture for improved data transfer rates and efficiency.
  • 2Gb Density: Offers a memory capacity of 2 Gigabits (256MB).
  • Operating Frequency: Operates at speeds up to 1600 MHz (PC3-12800), enabling fast data transfer rates.
  • Low Power Consumption: Designed for low voltage operation (typically 1.5V), minimizing power consumption and heat generation.
  • FBGA Package: Comes in a Fine-pitch Ball Grid Array (FBGA) package for efficient board mounting and optimal thermal performance.
  • RoHS Compliant: Meets RoHS (Restriction of Hazardous Substances) environmental standards.

Benefits:

  • High Bandwidth: Provides high bandwidth for demanding applications, enhancing system performance and responsiveness.
  • Reduced Power Consumption: Low voltage operation reduces power consumption, extending battery life in portable devices and minimizing energy costs.
  • Enhanced Performance: Improves overall system performance by enabling faster memory access and data transfer.
  • Reliability: Manufactured by Hynix, a trusted memory manufacturer, ensuring high reliability and quality.
  • Cost-Effective: Offers a cost-effective memory solution for various applications.

Additional Details:

The H5TQ2G63BFR-11C-C is internally organized into multiple banks, allowing for concurrent access and improved memory utilization. It supports features such as auto refresh, self refresh, and power-down modes for efficient power management. For detailed specifications, including timing parameters, temperature ratings, and voltage ranges, refer to the Hynix Semiconductor datasheet for this specific part number. This DDR3 SDRAM chip is built using advanced manufacturing processes to ensure reliable operation in various operating conditions.

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