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H5TQ1G83AFP-G7C-C

Part No H5TQ1G83AFP-G7C-C
Manufacturer Hynix Semiconductor
Catalog DDR
Description DDR3-1066 128Mx8 (1Gb)
Sample
Rohs State rohs
ECAD Module
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Categories Memory
Win Source Part Number 941527-H5TQ1G83AFP-G7C-C
Series *
Ultra Librarian 3D Model Ultra Librarian H5TQ1G83AFP-G7C-C CAD Model

Description

The H5TQ1G83AFP-G7C-C is a high-performance DDR3 SDRAM (Synchronous Dynamic Random-Access Memory) component manufactured by Hynix Semiconductor. This memory chip is designed to provide a combination of high bandwidth, low power consumption, and cost-effectiveness, making it suitable for a wide range of applications.

Applications:

  • Desktop and laptop computers
  • Graphics cards
  • Networking devices (routers, switches)
  • Embedded systems
  • Consumer electronics (smart TVs, set-top boxes)

Features:

  • DDR3 Technology: Utilizes DDR3 architecture for increased data transfer rates compared to previous generations.
  • 1Gb Density: Offers a memory density of 1 Gigabit (128MB).
  • Operating Frequency: Typically operates at speeds up to 800 MHz (data rate of 1600 MT/s) depending on the specific configuration and system requirements.
  • Low Power Consumption: Designed for low voltage operation (typically 1.5V) to minimize power consumption and heat generation.
  • FBGA Package: Packaged in a Fine-pitch Ball Grid Array (FBGA) for efficient board mounting and improved thermal performance.
  • RoHS Compliant: Complies with RoHS (Restriction of Hazardous Substances) environmental standards.

Benefits:

  • High Bandwidth: Enables faster data transfer rates, improving system performance and responsiveness.
  • Low Power: Reduces power consumption, leading to longer battery life in portable devices and lower energy costs in desktop systems.
  • Improved Performance: Enhances the overall performance of applications and systems by providing fast and efficient memory access.
  • Reliability: Hynix Semiconductor is a reputable manufacturer known for producing reliable and high-quality memory components.
  • Cost-Effective: Provides a cost-effective memory solution for a variety of applications.

Additional Details:

The H5TQ1G83AFP-G7C-C is organized internally into multiple banks, allowing for concurrent access and improved memory utilization. It supports various DDR3 features such as auto refresh, self refresh, and deep power-down mode. The exact specifications, including timing parameters and operating voltage ranges, can be found in the Hynix Semiconductor datasheet for this part number. This DDR3 SDRAM chip is built using advanced manufacturing processes and stringent quality control measures to ensure reliable operation in demanding environments.

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