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H5TC8G63AFR-PBA

Part No H5TC8G63AFR-PBA
Manufacturer Hynix Semiconductor
Catalog DDR
Description DDR3-1600 512Mx16 (8Gb) 1.35V
Sample
Rohs State rohs
ECAD Module
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Categories Memory
Win Source Part Number 940490-H5TC8G63AFR-PBA
Series *
Ultra Librarian 3D Model Ultra Librarian H5TC8G63AFR-PBA CAD Model

Description

The Hynix H5TC8G63AFR-PBA is a high-capacity DDR3 SDRAM (Synchronous Dynamic Random-Access Memory) chip designed for applications demanding significant memory resources and high bandwidth. It is manufactured by Hynix Semiconductor, a prominent player in the memory solutions market.

Applications

  • High-Performance Desktops: Used as main system memory to facilitate demanding applications and multitasking.
  • Servers: Provides substantial memory capacity for server workloads and virtualization.
  • Workstations: Supports memory-intensive professional applications such as video editing and CAD.
  • Gaming PCs: Enhances gaming performance by providing ample memory for textures and game assets.
  • Industrial Computing Systems: Suitable for industrial applications requiring robust memory performance.

Features

  • 8Gb Density: Offers a high memory capacity in a single chip, allowing for larger memory configurations.
  • DDR3 Technology: Leverages DDR3 technology for high-speed data transfer and improved memory performance.
  • FBGA Package: Employs a fine-pitch ball grid array package for reliable board mounting and optimized thermal characteristics.
  • Operating Temperature Range: Designed to operate within specified temperature limits to ensure stable performance.
  • Low Power Consumption: Engineered to minimize power consumption for energy efficiency.

Benefits

  • Enhanced System Performance: Enables faster application loading, smoother multitasking, and improved overall system responsiveness.
  • Greater Memory Capacity: Allows for handling larger datasets, complex simulations, and memory-intensive applications.
  • Improved Gaming Experience: Boosts frame rates and reduces stuttering in gaming applications.
  • Increased Server Capacity: Supports more virtual machines and larger workloads on server platforms.
  • Energy Efficiency: Reduces power consumption, lowering operational costs and improving battery life in portable devices.

Additional Details

The H5TC8G63AFR-PBA operates at voltage levels conforming to the DDR3 standard. Its timing parameters, which are critical for system stability and optimal performance, are typically configured through the system BIOS or memory controller. The chip incorporates multiple internal memory banks, facilitating parallel data access and increasing throughput. The 'PBA' speed grade designates a specific performance level within the DDR3 specifications. Refer to the official Hynix datasheet for detailed specifications, including voltage requirements, timing parameters, and thermal characteristics.

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