The HY57V641620HGT-H is a 64Mbit Synchronous DRAM (SDRAM) from Hynix Semiconductor. It is organized as 4 banks x 1M words x 16 bits. This SDRAM is designed for memory applications requiring high bandwidth and low latency.

Applications

• Main memory for embedded systems
• Graphics cards
• Networking equipment
• Printers
• Digital signal processing (DSP) applications
• Set-top boxes

Features

• 64Mbit (4 banks x 1M words x 16 bits)
• Operating frequencies: up to 166 MHz
• CAS Latency (CL) options: 2, 3
• Burst Length: 1, 2, 4, 8, Full Page
• Auto precharge and auto refresh capabilities
• Single 3.3V power supply
• LVTTL compatible inputs and outputs
• Package: TSOP II

Benefits

• High bandwidth for fast data transfer.
• Low latency for improved system responsiveness.
• Flexible burst modes for optimized memory access.
• Simplified system design with single 3.3V supply.
• Industry-standard package for easy integration.
• Low power consumption.

Additional Details

The HY57V641620HGT-H SDRAM supports burst read and write operations, allowing for efficient data transfer. It also incorporates auto precharge and auto refresh functions to simplify memory management. The 'H' at the end of the part number likely denotes a specific speed grade or temperature range. Detailed timing parameters and other electrical characteristics can be found in the Hynix datasheet.

Operating Conditions: The device operates with a 3.3V power supply. The operating temperature range is typically 0°C to +70°C. It is packaged in a Thin Small Outline Package (TSOP II).