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Same model may have multiple batches, images only for reference.
HGTH20N50E1D Intersil Corporation
Same model may have multiple batches, images only for reference.

HGTH20N50E1D

Part No HGTH20N50E1D
Manufacturer Harris Corporation
Catalog IGBTs - Single
Description 20A, 500V, N-CHANNEL IGBT
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr Harris Corporation
Package Bulk
Product Status Active
Voltage - Collector Emitter Breakdown (Max) 500 V
Current - Collector (Ic) (Max) 20 A
Current - Collector Pulsed (Icm) 35 A
Vce(on) (Max) @ Vge, Ic 3.2V @ 20V, 35A
Power - Max 100 W
Input Type Standard
Gate Charge 33 nC
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-218-3 Isolated Tab, TO-218AC
Supplier Device Package TO-218 Isolated
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 597686-HGTH20N50E1D
Ultra Librarian 3D Model Ultra Librarian HGTH20N50E1D CAD Model

Description

The HGTH20N50E1D is a single IGBT (Insulated Gate Bipolar Transistor) used in discrete semiconductor products.

  • Application: High power and voltage switching
  • Power Rating: 100W
  • Voltage Breakdown: 500V
  • Maximum Collector Current: 20A
  • Pulsed Current: 35A
  • Vce(on) Value: 3.2V @ 20V and 35A
  • Gate Charge: 33nC
  • Temperature Range: -55°C to 150°C
  • Mounting: Through-hole mountable
  • Package: TO-218-3 isolated tab
  • Manufacturer: Harris Corporation
  • Market Status: Currently active

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