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Same model may have multiple batches, images only for reference.
HGTG30N60C3 Intersil Corporation
Same model may have multiple batches, images only for reference.

HGTG30N60C3

Part No HGTG30N60C3
Manufacturer Harris Corporation
Catalog IGBTs - Single
Description 63A, 600V, UFS N-CHANNEL IGBT
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr Harris Corporation
Package Bulk
Product Status Active
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 63 A
Current - Collector Pulsed (Icm) 252 A
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 30A
Power - Max 208 W
Switching Energy 1.05mJ (on), 2.5mJ (off)
Input Type Standard
Gate Charge 250 nC
Td (on/off) @ 25°C 40ns/320ns
Test Condition 480V, 30A, 3Ohm, 15V
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-274AA
Supplier Device Package SUPER-247 (TO-274AA)
Standard Package 124 pcs
MSL Level 3 (168 Hours)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 0000.00.0000
Win Source Part Number 597682-HGTG30N60C3
Ultra Librarian 3D Model Ultra Librarian HGTG30N60C3 CAD Model

Description

The 597682-HGTG30N60C3 is a single IGBT transistor used in discrete semiconductor products.

  • Power: 208W
  • Vce: 600V
  • Ic: 63A
  • Icm: 252A
  • Vce(on): 1.8V @ 15V and 30A
  • Gate Charge: 250nC
  • Switching Energy (On): 1.05mJ
  • Switching Energy (Off): 2.5mJ
  • Input Type: Standard
  • Gate Charge: 250nC
  • Package: TO-274AA
  • Mounting: Through-Hole
  • Operating Temperature: -55°C to 150°C
  • Status: Active
  • Manufacturer: Harris Corporation

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