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Same model may have multiple batches, images only for reference.
HGTG24N60D1 Intersil Corporation
Same model may have multiple batches, images only for reference.

HGTG24N60D1

Part No HGTG24N60D1
Manufacturer Harris Corporation
Catalog IGBTs - Single
Description UFS SERIES N-CHANNEL IGBT
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr Harris Corporation
Package Bulk
Product Status Active
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 40 A
Current - Collector Pulsed (Icm) 96 A
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 24A
Power - Max 125 W
Input Type Standard
Gate Charge 155 nC
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247
Standard Package 34 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 597679-HGTG24N60D1
Ultra Librarian 3D Model Ultra Librarian HGTG24N60D1 CAD Model

Description

The HGTG24N60D1 is a single IGBT (Insulated Gate Bipolar Transistor) from Harris Corporation.

  • Application: Designed for high-power applications
  • Maximum Power: 125W
  • Voltage Breakdown: 600V
  • Maximum Collector Current: 40A
  • On-State Voltage: Low
  • Gate Charge: 155nC
  • Package: Through-hole
  • Temperature Range: -55°C to 150°C

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