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Same model may have multiple batches, images only for reference.
HGT1S7N60B3
Same model may have multiple batches, images only for reference.

HGT1S7N60B3

Part No HGT1S7N60B3
Manufacturer Harris Corporation
Catalog IGBTs - Single
Description 14A, 600V, N-CHANNEL IGBT
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr Harris Corporation
Package Bulk
Product Status Active
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 14 A
Current - Collector Pulsed (Icm) 56 A
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 7A
Power - Max 60 W
Switching Energy 160µJ (on), 120µJ (off)
Input Type Standard
Gate Charge 30 nC
Td (on/off) @ 25°C 26ns/130ns
Test Condition 480V, 7A, 50Ohm, 15V
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package I2PAK (TO-262)
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 920213-HGT1S7N60B3
Ultra Librarian 3D Model Ultra Librarian HGT1S7N60B3 CAD Model

Description

The HGT1S7N60B3 is a single IGBT (Insulated Gate Bipolar Transistor) designed for high power applications. It comes in a TO-262-3 Long Leads, I²Pak package and is manufactured by Harris Corporation.

  • Power Rating: 60W
  • Voltage Breakdown: 600V
  • Maximum Collector Current: 14A
  • Maximum Collector Pulsed Current: 56A
  • Vce(on): 2.1V @ 15V and 7A
  • Application: Switching
  • Gate Charge: 30nC
  • Package: TO-262-3 Long Leads, I²Pak

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