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Same model may have multiple batches, images only for reference.
G3S12020B Real Image
Same model may have multiple batches, images only for reference.

G3S12020B

Part No G3S12020B
Manufacturer Global Power Technologies Group
Catalog Diodes, Rectifiers - Arrays
Description SIC SCHOTTKY DIODE 1200V 20A 3-P
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Diodes - Rectifiers - Diode Arrays
Mfr Global Power Technologies Group
Package Cut Tape (CT)Tape & Box (TB)
Product Status Active
Diode Configuration 1 Pair Common Cathode
Technology SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) 1200 V
Current - Average Rectified (Io) (per Diode) 37A (DC)
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 10 A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 50 µA @ 1200 V
Operating Temperature - Junction -55°C ~ 175°C
Mounting Type Through Hole
Package / Case TO-247-2
Supplier Device Package TO-247AC
Standard Package 30 pcs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH info available upon request
ECCN EAR99
HTSUS 8541.10.0080
Win Source Part Number 1223726-G3S12020B
Ultra Librarian 3D Model Ultra Librarian G3S12020B CAD Model

Description

The 1223726-G3S12020B is a high-speed SiC (Silicon Carbide) Schottky diode array.

  • Maximum Reverse Voltage: 1200V
  • Forward Voltage: 1.7V @ 10A
  • Recovery Time: No recovery time
  • Configuration: 1 pair of common cathode
  • Reverse Recovery Time: 0ns
  • Temperature Range: -55°C to 175°C
  • Mounting: Through hole using a TO-247-2 package
  • Current Rating: 37A (DC)
  • Manufacturer: Global Power Technologies Group
  • Status: Active product
  • Description: Ensure efficient power rectification in your electronic circuits with this high-speed SiC Schottky diode array.

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