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MURF10020R

Part No MURF10020R
Manufacturer GeneSiC Semiconductor
Catalog Diodes, Rectifiers - Arrays
Description DIODE MODULE 200V 50A TO244 / Diode Array 1 Pair Common Anode Standard 200 V 50A Chassis Mount TO-244AB
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products>Diodes - Rectifiers - Arrays
Mfr GeneSiC Semiconductor
Package Bulk
Product Status Obsolete
Diode Configuration 1 Pair Common Anode
Diode Type Standard
Voltage - DC Reverse (Vr) (Max) 200 V
Current - Average Rectified (Io) (per Diode) 50A
Voltage - Forward (Vf) (Max) @ If 1.3 V @ 50 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 75 ns
Current - Reverse Leakage @ Vr 25 µA @ 50 V
Operating Temperature - Junction -55°C ~ 150°C
Mounting Type Chassis Mount
Package / Case TO-244AB
Supplier Device Package TO-244
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.10.0080
Other Names MURF10020RGN
Standard Package 25
Win Source Part Number 1185991-MURF10020R
Ultra Librarian 3D Model Ultra Librarian MURF10020R CAD Model

Description

The MURF10020R is an Ultrafast Rectifier diode manufactured by GeneSiC Semiconductor. It is designed for high-speed switching applications requiring minimal reverse recovery time, high voltage capability and low forward voltage drop.

Applications

  • Power factor correction (PFC) circuits
  • Freewheeling diodes in inverters
  • Output rectification in switched-mode power supplies (SMPS)
  • Snubber circuits
  • High-frequency welding equipment

Features

  • Ultrafast recovery time
  • High voltage capability (200V)
  • Low forward voltage drop
  • High surge current capability
  • Low leakage current
  • RoHS compliant

Benefits

  • Improves efficiency in power electronic circuits
  • Reduces switching losses and EMI
  • Enhances system reliability and performance
  • Simplifies circuit design
  • Reduces heat dissipation

Additional Details

The MURF10020R has a maximum repetitive peak reverse voltage (VRRM) of 200V and a forward current rating of 100A. The typical reverse recovery time (trr) is very low. The operating junction temperature ranges from -65°C to +175°C. The device is typically packaged in a TO-247 or similar high-power package. The low forward voltage drop reduces conduction losses and enhances overall efficiency. Its robust design ensures reliable operation in harsh environments. The MURF10020R is suitable for high-frequency applications requiring fast switching and high efficiency.

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