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Same model may have multiple batches, images only for reference.
GD25MPS17H Real Image
Same model may have multiple batches, images only for reference.

GD25MPS17H

Part No GD25MPS17H
Manufacturer GeneSiC Semiconductor
Catalog Diodes, Rectifiers - Single
Description DIODE SIL CARB 1.7KV 56A TO247-2 / Diode 1700 V 56A Through Hole TO-247-2
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Diodes - Rectifiers - Single Diodes
Mfr GeneSiC Semiconductor
Series SiC Schottky MPS™
Package Tube
Technology SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) 1700 V
Current - Average Rectified (Io) 56A
Voltage - Forward (Vf) (Max) @ If 1.8 V @ 25 A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 20 µA @ 1700 V
Capacitance @ Vr, F 1083pF @ 1V, 1MHz
Mounting Type Through Hole
Package / Case TO-247-2
Supplier Device Package TO-247-2
Operating Temperature - Junction -55°C ~ 175°C
Standard Package 30
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0080
Win Source Part Number 1351325-GD25MPS17H
Ultra Librarian 3D Model Ultra Librarian GD25MPS17H CAD Model

Description

The GeneSiC Semiconductor GD25MPS17H is a Silicon Carbide Schottky diode in a TO-247-2 package.

  • Manufacturer: GeneSiC Semiconductor
  • Type: Silicon Carbide Schottky Diode
  • Package: TO-247-2
  • Voltage: 1700V
  • Current: 56A
  • Forward Voltage: 1.8V @ 25A
  • Reverse Recovery Time: None
  • Package Quantity: 30
  • Mounting: Through-Hole
  • Temperature Range: -55°C to 175°C (TJ)

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