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Same model may have multiple batches, images only for reference.
GB02SHT06-46 GeneSiC Semiconductor
Same model may have multiple batches, images only for reference.

GB02SHT06-46

Part No GB02SHT06-46
Manufacturer GeneSiC Semiconductor
Catalog Diodes, Rectifiers - Single
Description DIODE SIL CARBIDE 600V 4A TO46
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Win Source Part Number Cross
Manufacturer GeneSiC Semiconductor
Category Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Packaging Bulk
Part Status Active
Voltage - DC Reverse (Vr) (Max) 600 V
Current - Average Rectified (Io) 4A
Voltage - Forward (Vf) (Max) @ If 1.6 V @ 1 A
Speed No Recovery Time > 500mA (Io)
Current - Reverse Leakage @ Vr 5 µA @ 600 V
Capacitance @ Vr, F 76pF @ 1V, 1MHz
Operating Temperature - Junction -55°C ~ 225°C
Win Source Part Number WS1305557-GB02SHT06-46
Ultra Librarian 3D Model Ultra Librarian GB02SHT06-46 CAD Model

Description

Features
● 600 V Schottky rectifier
● 210 °C maximum operating temperature
● Zero reverse recovery charge
●  Superior surge current capability
● Positive temperature coefficient of VF
●  Temperature independent switching behavior
● Lowest figure of merit QC/IF
● Available screened to Mil-PRF-19500

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