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Same model may have multiple batches, images only for reference.
GB01SLT12-220 GeneSiC Semiconductor
Same model may have multiple batches, images only for reference.

GB01SLT12-220

Part No GB01SLT12-220
Manufacturer GeneSiC Semiconductor
Catalog Diodes, Rectifiers - Single
Description DIODE SIL CARB 1.2KV 1A TO220-2
Datasheet
GB01SLT12-220 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Win Source Part Number Cross
Manufacturer GeneSiC Semiconductor
Category Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Part Status Obsolete
Technology SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) 1200 V
Current - Average Rectified (Io) 1A
Speed No Recovery Time > 500mA (Io)
Current - Reverse Leakage @ Vr 2 µA @ 1200 V
Capacitance @ Vr, F 69pF @ 1V, 1MHz
Supplier Device Package TO-220-2
Win Source Part Number WS1305550-GB01SLT12-220
Ultra Librarian 3D Model Ultra Librarian GB01SLT12-220 CAD Model

Description

● 1200 V Schottky rectifier
● 175 °C maximum operating temperature
● Temperature independent switching behavior
● Superior surge current capability
● Positive temperature coefficient of VF
● Extremely fast switching speeds
● Superior figure of merit QC/IF

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