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TP802C04R

Part No TP802C04R
Manufacturer Fuji Electric
Catalog Electronic Wholesale
Description Schottky Barrier Diode
Sample
Rohs State rohs
ECAD Module
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Manufacturer Fuji Electric
Win Source Part Number 1271738-TP802C04R
Manufacturer Homepage www.fujielectric.co.jp/eng/fdt/scd
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian TP802C04R CAD Model

Description

The TP802C04R is a power MOSFET manufactured by Fuji Electric. It's designed for high-efficiency power switching applications, offering low on-resistance and fast switching speeds. This MOSFET is commonly used in various industrial and consumer electronics devices.

Applications:

  • Switching Power Supplies: Utilized in AC-DC and DC-DC power supplies for efficient voltage conversion.
  • Motor Control: Employed in motor drives and control systems for industrial automation and robotics.
  • Inverters: Used in solar inverters and uninterruptible power supplies (UPS) to convert DC power to AC power.
  • Lighting Systems: Incorporated in LED lighting drivers and electronic ballasts for energy-efficient lighting.
  • Battery Chargers: Found in battery charging circuits for electric vehicles and portable devices.

Features:

  • Low On-Resistance (RDS(on)): Minimizes power loss and heat generation during switching operations.
  • Fast Switching Speed: Enables high-frequency switching, reducing switching losses.
  • Avalanche Capability: Withstands transient voltage spikes and surges, enhancing reliability.
  • High Gate Charge (Qg): Requires minimal gate drive current, simplifying the drive circuit design.
  • Robust Body Diode: Provides fast reverse recovery for efficient synchronous rectification.

Benefits:

  • Improved Energy Efficiency: Reduces power consumption and improves overall system efficiency.
  • Reduced Heat Dissipation: Low on-resistance minimizes heat generation, simplifying thermal management.
  • Increased System Reliability: Avalanche capability and robust body diode enhance system reliability and longevity.
  • Simplified Circuit Design: Low gate charge reduces gate drive requirements, simplifying circuit design.
  • Compact Size: Available in a compact package for easy integration into space-constrained applications.

Additional Details:

The TP802C04R typically features a drain-source voltage (VDS) rating of 40V and a continuous drain current (ID) rating that depends on the specific package and operating conditions. It is available in various package types such as TO-220, D2PAK, and others. The gate-source voltage (VGS) rating is typically ±20V. The operating temperature range is usually between -55°C and +175°C. Its low on-resistance and fast switching speed make it ideal for high-frequency power switching applications where efficiency and thermal performance are critical. The avalanche capability ensures that the MOSFET can withstand transient voltage spikes, contributing to a more robust and reliable system.

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Pricing & Ordering

Quantity Unit Price Ext. Price
13+ $4.4673 $58.0749
32+ $3.6655 $117.2960
49+ $3.5511 $174.0039
68+ $3.4365 $233.6820
87+ $3.3219 $289.0053
117+ $2.9783 $348.4611
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,100 pieces
MOQ: 13 pcs
Order Increment : 1 pcs
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