The FMA25N50G is a high-voltage N-channel MOSFET from Fuji Electric, designed for high-efficiency power switching applications. This MOSFET features a robust avalanche ruggedness and excellent gate charge characteristics, making it suitable for demanding power electronic circuits.

Applications

• Switch-mode power supplies (SMPS)
• Power factor correction (PFC) circuits
• Uninterruptible power supplies (UPS)
• Motor control
• Inverters

Features

• High avalanche ruggedness
• Low gate charge
• Fast switching speed
• RoHS compliant
• Improved dv/dt capability

Benefits

• High efficiency power switching reduces power loss and improves overall system efficiency.
• Low gate charge minimizes driving power requirements, simplifying gate drive circuitry.
• Fast switching speed enables higher frequency operation, reducing the size and cost of passive components.
• Robust avalanche ruggedness provides protection against voltage transients, improving system reliability.

Specifications

Although specific detailed specifications require referencing the official Fuji Electric datasheet for the FMA25N50G, typical specifications include:

• Drain-Source Voltage (Vds): 500V
• Gate-Source Voltage (Vgs): ±30V
• Continuous Drain Current (Id): 25A (at 25°C)
• Pulsed Drain Current (Idm): 75A
• Gate Charge (Qg): Typically around 25 nC
• On-Resistance (Rds(on)): Typically around 0.19 ohms
• Operating Temperature Range: -55°C to +150°C
• Package: TO-220F