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SAT26H160-4S4R3

Part No SAT26H160-4S4R3
Manufacturer Freescale Semiconductor - NXP
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Manufacturer Freescale Semiconductor - NXP
Popularity Low
Supply and Demand Status Balance
Win Source Part Number 836688-SAT26H160-4S4R3
Ultra Librarian 3D Model Ultra Librarian SAT26H160-4S4R3 CAD Model

Description

The SAT26H160-4S4R3 is a high-performance static random-access memory (SRAM) device manufactured by NXP Semiconductors (formerly Freescale). This SRAM is designed for applications requiring fast access times, low power consumption, and high reliability. It's typically used in embedded systems, networking equipment, and other high-speed data processing applications.

Applications

  • Networking equipment (routers, switches)
  • Embedded systems
  • Industrial control systems
  • High-speed data acquisition systems
  • Telecommunications equipment

Features

  • High-speed access times (typically in the nanosecond range)
  • Low power consumption
  • High reliability
  • Asynchronous operation
  • Single power supply operation
  • Data retention capability
  • Available in various package options for different mounting requirements

Benefits

  • Improved System Performance: High-speed access times reduce latency and improve overall system throughput.
  • Reduced Power Consumption: Low power consumption extends battery life in portable devices and reduces energy costs in other applications.
  • Enhanced Reliability: High reliability ensures stable operation in demanding environments.
  • Simplified System Design: Asynchronous operation simplifies system integration and reduces design complexity.
  • Flexibility: Available in various package options, offering flexibility in board design and manufacturing.

Additional Details

The SAT26H160-4S4R3 is typically organized as a specific number of words by bits (e.g., 16K x 16 bits, though this can vary). Its access time can be as low as 4ns, or slightly above, depending on voltage and temperature conditions. It requires a single power supply, which generally operates between 3.3V and 5V. This SRAM utilizes CMOS technology, which allows for low power operation and noise immunity.

Consult the official NXP Semiconductors datasheet for the SAT26H160-4S4R3 to obtain detailed electrical characteristics, timing diagrams, package dimensions, and ordering information. It is crucial to refer to the datasheet for precise specifications and application guidelines when incorporating this SRAM into your design.

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