The MW7IC18100NB is a high-power RF LDMOS transistor from NXP Semiconductors (formerly Freescale). It's designed for use in various high-frequency applications, providing substantial power amplification with excellent linearity and efficiency.

Applications:

• Industrial, Scientific, and Medical (ISM) applications
• RF heating
• Plasma generators
• MRI (Magnetic Resonance Imaging) systems
• CO2 lasers

Features:

• Frequency range: 1.8 - 100 MHz
• Output power: 100 W CW
• High gain: 20 dB typical
• High efficiency: 75% typical
• 28 V operation
• Integrated ESD protection
• Thermally enhanced package

Benefits:

• High Power Output: Delivers 100W of continuous wave (CW) power for demanding applications.
• High Efficiency: Operates at high efficiency, minimizing power consumption and heat dissipation.
• Excellent Linearity: Provides clean and undistorted signal amplification, essential for sensitive applications.
• Robust Design: Integrated ESD protection enhances reliability and reduces the risk of damage.
• Thermal Performance: Thermally enhanced package facilitates efficient heat removal, ensuring stable operation.

Technical Specifications:

The MW7IC18100NB operates from 1.8 to 100 MHz. It provides a typical power gain of 20 dB and a typical drain efficiency of 75% at 28V. The input impedance is matched to 50 ohms for ease of integration. The device is housed in a thermally enhanced NI-780 package, which allows for effective heat dissipation. It is designed to withstand a high VSWR (Voltage Standing Wave Ratio), making it robust in demanding applications. The device is RoHS compliant.

The MW7IC18100NB is a high-performance LDMOS transistor designed for demanding RF power amplification applications. Its combination of high power output, efficiency, and linearity makes it an excellent choice for ISM, medical, and industrial applications.