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SSS6N60A

Part No SSS6N60A
Manufacturer Fairchild/ON Semiconductor
Catalog HOT - SALES and EOL Components (S)
Sample
Rohs State Need to verify
ECAD Module
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Manufacturer Fairchild Semiconductor
Win Source Part Number 341740-SSS6N60A
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SSS6N60A CAD Model

Description

The SSS6N60A is an N-Channel MOSFET from Fairchild Semiconductor/ON Semiconductor, designed for high-voltage, high-speed switching applications. It offers excellent performance and efficiency, making it suitable for various power electronics applications, particularly in switching power supplies and motor controls. Commonly available in a TO-220 package, the SSS6N60A is designed for ease of use and thermal management.

Applications:

  • Switching Power Supplies (SMPS)
  • Power Factor Correction (PFC) circuits
  • DC-DC converters
  • Uninterruptible Power Supplies (UPS)
  • Motor Control circuits

Features:

  • High Voltage Capability (600V)
  • Low On-Resistance (RDS(on))
  • Fast Switching Speed
  • Avalanche Energy Rated
  • RoHS Compliant

Benefits:

  • Improved Power Efficiency: The low RDS(on) minimizes conduction losses, resulting in higher efficiency and reduced heat generation.
  • Enhanced System Reliability: High voltage capability and avalanche energy rating ensure robustness and reliability under stress conditions.
  • Simplified Thermal Management: Reduced power dissipation simplifies heatsink design and improves overall thermal performance.
  • Optimized Switching Performance: Fast switching speed minimizes switching losses, making it suitable for high-frequency applications.
  • Environmentally Friendly: RoHS compliance ensures adherence to environmental regulations.

Additional Details:

The SSS6N60A features a Drain-Source Voltage (VDS) of 600V, Gate-Source Voltage (VGS) of ±30V, and a continuous Drain Current (ID) of approximately 6A at 25°C. The static Drain-Source On-Resistance (RDS(on)) is typically around 1.2 Ohms at VGS=10V. The total Gate Charge (Qg) influences switching speed and drive requirements. The operating temperature range is generally from -55°C to +150°C. It's encapsulated in a TO-220 package for effective heat dissipation.

This MOSFET utilizes planar technology for enhanced performance and reliability. The fast switching speed and low on-resistance contribute to reduced power losses in high-frequency power converters, improving efficiency and overall system performance. Fairchild/ON Semiconductor designs this MOSFET for robustness in power electronic applications, ensuring it can withstand various operating conditions and stress factors.

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