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NDH8502P

Name: NDH8502P
Brand: Fairchild/ON Semiconductor
SKU: 251706
Availability: InStock
Rating: 4.85 (5 reviews)

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Part No	NDH8502P
Manufacturer	Fairchild/ON Semiconductor
Catalog	FETs - Arrays
Description	P-CHANNEL MOSFET
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr	Fairchild/ON Semiconductor
Package	Bulk
Product Status	Active
Technology	MOSFET (Metal Oxide)
Configuration	2 P-Channel (Dual)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	2.2A (Ta)
Rds On (Max) @ Id, Vgs	110mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	14.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	340pF @ 15V
Power - Max	800mW (Ta)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-TSOP (0.130", 3.30mm Width)
Supplier Device Package	SuperSOT™-8
Base Product Number	NDH8502
Standard Package	3,000 pcs
MSL Level	1 (Unlimited)
REACH Status	Vendor Undefined
ECCN	EAR99
HTSUS	8541.21.0095
Win Source Part Number	251706-NDH8502P
Ultra Librarian 3D Model	Ultra Librarian NDH8502P CAD Model

Description

The NDH8502P is a P-Channel MOSFET transistor in a SuperSOT™-8 package. It features a drain to source voltage (Vdss) of 30V and a continuous drain current (Id) of 2.2A @ 25°C.

Maximum on-resistance (Rds On): 110mOhm @ 2.2A and 10V
Gate threshold voltage (Vgs(th)): 3V @ 250µA
Maximum power dissipation: 800mW
Gate charge (Qg): 14.5nC @ 10V
Input capacitance (Ciss): 340pF @ 15V

Operating in a temperature range of -55°C to 150°C, the NDH8502P is a high-quality and reliable choice for your electronic projects.

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