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NDH8321C

Part No NDH8321C
Manufacturer Fairchild/ON Semiconductor
Catalog FETs - Arrays
Description P-CHANNEL MOSFET
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr Fairchild/ON Semiconductor
Package Bulk
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration N and P-Channel
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 3.8A (Ta), 2.7A (Ta)
Rds On (Max) @ Id, Vgs 35mOhm @ 3.8A, 4.5V, 70mOhm @ 2.7A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 28nC @ 4.5V, 23nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 700pF @ 10V, 865pF @ 10V
Power - Max 800mW (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-TSOP (0.130", 3.30mm Width)
Supplier Device Package SuperSOT™-8
Base Product Number NDH8321
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 251703-NDH8321C
Ultra Librarian 3D Model Ultra Librarian NDH8321C CAD Model

Description

The 251703-NDH8321C is a MOSFET transistor array designed for use in discrete semiconductor products. It features a drain to source voltage (Vdss) of 20V, with a maximum continuous drain current (Id) of 3.8A @ 25°C.

  • Rds On (Max): 35mOhm @ 3.8A and 4.5V, and 70mOhm @ 2.7A and 4.5V
  • Gate charge (Qg): 28nC @ 4.5V
  • Input capacitance (Ciss): 700pF @ 10V
  • Power rating: 800mW

With a power rating of 800mW, this MOSFET transistor array is suitable for a range of applications in the electronics industry. It is configured as both N and P-channel and is surface mountable in an 8-TSOP package. The operating temperature range is from -55°C to 150°C, making it suitable for use in various environments. The 251703-NDH8321C is an active product from Fairchild/ON Semiconductor.

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