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HGTP7N60A4D Real Image1 HGTP7N60A4D Real Image2
Same model may have multiple batches, images only for reference.
HGTP7N60A4D Real Image1 HGTP7N60A4D Real Image2
HGTP7N60A4D Real Image1 HGTP7N60A4D Real Image2
Same model may have multiple batches, images only for reference.

HGTP7N60A4D

Part No HGTP7N60A4D
Manufacturer Fairchild/ON Semiconductor
Catalog IGBTs - Single
Description IGBT 600V 34A 125W TO220AB
Datasheet
HGTP7N60A4D Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 34A
Pulsed Collector Current 56A
Collector-emitter saturation voltage(Max) 2.7V @ 15V, 7A
Maximum Power Dissipation 125W
Total Switching Energy(Ets) 55μJ (on), 60μJ (off)
Input Type Standard
Gate Charge 37nC
Turn-on and Turn-off delay time 11ns/100ns
Testing Conditions 390V, 7A, 25 Ohm, 15V
Reverse Recovery Time (trr) 34ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Win Source Part Number 1043312-HGTP7N60A4D
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian HGTP7N60A4D CAD Model

Description

The HGTP7N60A4D is a through-hole IGBT transistor manufactured by Fairchild/ON Semiconductor.

  • Manufacturer: Fairchild/ON Semiconductor
  • Product Name: HGTP7N60A4D
  • Mounting Type: Through-Hole
  • Collector-Emitter Breakdown Voltage: 600V
  • Power Dissipation: 125W
  • Reverse Recovery Time (trr): 34ns
  • Gate Charge: 37nC
  • Collector-Emitter Saturation Voltage (Max): 2.7V @ 15V and 7A
  • Total Switching Energy (Ets): 55μJ (on) and 60μJ (off)
  • Turn-On/Turn-Off Delay Time: 11ns/100ns
  • Case/Package: TO-220AB
  • Collector Current: 34A
  • Supply and Demand: Balanced

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